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Publikationen

Mechanisms of hot-carrier degradation of analog device parameters in n-MOSFETs

R. Thewes, W. Weber, and K. Goser

pp. 85-88, 1993. Conference Location : Grenoble


Hot-carrier stress effects of p-MOSFETs: physical effects relevant for circuit operation

W. Weber, M. Brox, A. v. Schwerin, and R. Thewes

Volume: 22 (1-4) pp. 253-260, 1993. Amsterdam, The Netherlands, The Netherlands


Hot-carrier degradation of p-MOSFET's in analog operation: the relevance of the channel-length-independent drain conductance degradation

R. Thewes, M. Brox, G. Tempel, W. Weber, and K. Goser

R. Thewes, M. Brox, G. Tempel, W. Weber, and K. Goser. Hot-carrier degradation of p-MOSFET's in analog operation: the relevance of the channel-length-independent drain conductance degradation. Tech. Digest International Electron Device Meeting (IEDM) 1992. San Francisco, CA


Channel-length-independent hot-carrier degradation in analog p-MOS operation

R. Thewes, M. Brox, G. Tempel, W. Weber, and K. Goser

Volume: 13 pp. 590-592, 1992.


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