direkt zum Inhalt springen

direkt zum Hauptnavigationsmenü

Sie sind hier

TU Berlin

Inhalt des Dokuments

Suche nach Publikationen




Publikationen

Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications

S. Schröder, O. Dogan, j. Schneidewind, G. Bertotti, S. Keil, H. Gargouri, M. Arens, E. Brose, J. Bruns, D. Wolansky, B. Tillack, S. Vassanelli, B. Szszka, and R. Thewes

pp. 21-24, 2015.


Artifact-Compensated Time-Continuous Recording from Neural Tissue during Stimulation Using a Capacitively Coupled In-Vitro CMOS-MEA with 4k Recording and 1k Stimulation Sites

G. Bertotti, J. Florian, N. Dodel, St. Keil, C. Boucsein, A. Möller, K. Boven, G. Zeck, and R. Thewes

IEEE Biomedical Circuits and Systems Conference (BioCAS) pp. 303-306, 2016.


A CMOS-based sensor array for in-vitro neural tissue interfacing with 4225 recording sites and 1024 stimulation sites

G. Bertotti, D. Velychko, N. Dodel, St. Keil, D. Wolansky, B. Tillak, M. Schreiter, A. Grall, P. Jesinger, R. Rohler, M. Eickenscheidt, A. Stett, A. Moller, K.-H. Boven, G. Zeck, and R. Thewes

pp. 304-307, 2014.


CMOS sensor arrays for bio molecule diagnostics

R.Thewes

pp. 17-20, 2010. Warsaw


Channel-length-independent hot-carrier degradation in analog p-MOS operation

R. Thewes, M. Brox, G. Tempel, W. Weber, and K. Goser

Volume: 13 pp. 590-592, 1992.


Hot-carrier degradation of p-MOSFET's in analog operation: the relevance of the channel-length-independent drain conductance degradation

R. Thewes, M. Brox, G. Tempel, W. Weber, and K. Goser

R. Thewes, M. Brox, G. Tempel, W. Weber, and K. Goser. Hot-carrier degradation of p-MOSFET's in analog operation: the relevance of the channel-length-independent drain conductance degradation. Tech. Digest International Electron Device Meeting (IEDM) 1992. San Francisco, CA


Hot-carrier stress effects of p-MOSFETs: physical effects relevant for circuit operation

W. Weber, M. Brox, A. v. Schwerin, and R. Thewes

Volume: 22 (1-4) pp. 253-260, 1993. Amsterdam, The Netherlands, The Netherlands


Mechanisms of hot-carrier degradation of analog device parameters in n-MOSFETs

R. Thewes, W. Weber, and K. Goser

pp. 85-88, 1993. Conference Location : Grenoble


Evaluation of the hot-carrier-induced offset voltage of differential pairs in analog circuits

R. Thewes, M. Kivi, K. Goser, and W. Weber

pp. 127-130, 1994.


Characterization and model of the hot-carrier-induced offset voltage of analog CMOS differential stages

R. Thewes, K. Goser, and W. Weber

pp. 303-306, 1994. Conference Location : San Francisco, CA, USA


Nach oben

Zusatzinformationen / Extras

Direktzugang

Schnellnavigation zur Seite über Nummerneingabe